Military, MIL-PRF-19500/441 Series, Single Bipolar Transistors

Results:
9
Manufacturer
Series
Operating Temperature
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Package / Case
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
Grade
Qualification
Transistor Type
Power - Max
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Results remaining9
Applied Filters:
Military, MIL-PRF-19500/441
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseVoltage - Collector Emitter Breakdown (Max)Power - MaxGradeSeriesTransistor TypeCurrent - Collector (Ic) (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionSupplier Device PackageQualification
JANS2N3741U4
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
80 V
25 W
-
Military, MIL-PRF-19500/441
PNP
4 A
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
-
U4
-
JANTX2N3740U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
25 W
-
Military, MIL-PRF-19500/441
PNP
4 A
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
-
U4
-
JANTX2N3741U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
80 V
25 W
-
Military, MIL-PRF-19500/441
PNP
4 A
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
-
U4
-
JANTXV2N3740U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
25 W
-
Military, MIL-PRF-19500/441
PNP
4 A
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
-
U4
-
JANTXV2N3741U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
80 V
25 W
-
Military, MIL-PRF-19500/441
PNP
4 A
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
-
U4
-
JANS2N3741
TRANS PNP 80V 10UA TO66
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 200°C (TJ)
TO-213AA, TO-66-2
80 V
25 W
-
Military, MIL-PRF-19500/441
PNP
4 A
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
-
TO-66 (TO-213AA)
-
JAN2N3740U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
25 W
-
Military, MIL-PRF-19500/441
PNP
4 A
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
-
U4
-
JAN2N3741U4
TRANS PNP 80V 10UA U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
80 V
25 W
-
Military, MIL-PRF-19500/441
PNP
4 A
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
-
U4
-
JANS2N3740
TRANS PNP 60V 10UA TO66
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 200°C (TJ)
TO-213AA, TO-66-2
60 V
25 W
-
Military, MIL-PRF-19500/441
PNP
4 A
600mV @ 1.25mA, 1A
10µA
30 @ 250mA, 1V
-
TO-66 (TO-213AA)
-

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.