Military, MIL-PRF-19500/397 Series, Single Bipolar Transistors

Results:
18
Manufacturer
Series
Voltage - Collector Emitter Breakdown (Max)
Mounting Type
Supplier Device Package
Package / Case
Current - Collector Cutoff (Max)
Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
Grade
Qualification
Transistor Type
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Results remaining18
Applied Filters:
Military, MIL-PRF-19500/397
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CasePower - MaxGradeSeriesTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcDC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionSupplier Device PackageCurrent - Collector Cutoff (Max)Qualification
JANTX2N4930U4
TRANS PNP 200V 0.2A U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
200 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
U4
-
-
JANTXV2N4931
TRANS PNP 250V 0.2A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
250 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
TO-39 (TO-205AD)
250nA (ICBO)
-
JANTX2N4931
TRANS PNP 250V 0.2A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
250 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
TO-39 (TO-205AD)
250nA (ICBO)
-
JANTXV2N3743U4/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
300 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
U4
-
-
JANTXV2N4931U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
250 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
U4
-
-
JANTXV2N4930U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
200 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
U4
-
-
JANTXV2N4930
TRANS PNP 200V 0.2A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
200 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
TO-39 (TO-205AD)
-
-
JANTXV2N3743U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
300 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
U4
-
-
JANTXV2N3743
TRANS PNP 300V 0.2A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
300 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
TO-39 (TO-205AD)
250nA (ICBO)
-
JANTX2N4930
TRANS PNP 200V 0.2A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
200 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
TO-39 (TO-205AD)
-
-
JANTX2N3743U4
TRANS PNP 300V 0.2A U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
300 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
U4
-
-
JAN2N4931U4
TRANS PNP 250V 0.2A U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
250 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
U4
-
-
JAN2N4931
TRANS PNP 250V 0.2A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
250 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
TO-39 (TO-205AD)
250nA (ICBO)
-
JAN2N4930U4
TRANS PNP 200V 0.2A U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
200 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
U4
-
-
JAN2N4930
TRANS PNP 200V 0.2A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
200 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
TO-39 (TO-205AD)
-
-
JAN2N3743U4
TRANS PNP 300V 0.2A U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
300 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
U4
-
-
JAN2N3743
TRANS PNP 300V 0.2A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
300 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
TO-39 (TO-205AD)
250nA (ICBO)
-
JANTX2N4931U4
TRANS PNP 250V 0.2A U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1 W
-
Military, MIL-PRF-19500/397
PNP
200 mA
250 V
1.2V @ 3mA, 30mA
50 @ 30mA, 10V
-
U4
-
-

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.