Military, MIL-PRF-19500/396 Series, Single Bipolar Transistors

Results:
27
Manufacturer
Series
Supplier Device Package
Package / Case
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Current - Collector Cutoff (Max)
Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
Grade
Qualification
Transistor Type
Results remaining27
Applied Filters:
Military, MIL-PRF-19500/396
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CasePower - MaxOperating TemperatureGradeSeriesTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionSupplier Device PackageQualification
JANTXV2N3762L
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-205AA, TO-5-3 Metal Can
1 W
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
40 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
-
TO-5AA
-
JANTXV2N3763L
TRANS PNP 60V 1.5A TO5
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-205AA, TO-5-3 Metal Can
1 W
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
60 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
-
TO-5AA
-
JANTXV2N3765
TRANS PNP 60V 1.5A TO46
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-206AB, TO-46-3 Metal Can
500 mW
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
60 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
-
TO-46 (TO-206AB)
-
JANS2N3764
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-206AB, TO-46-3 Metal Can
500 mW
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
40 V
900mV @ 100mA, 1A
10µA (ICBO)
30 @ 1A, 1.5V
-
TO-46 (TO-206AB)
-
JANS2N3765
TRANS PNP 60V 1.5A TO46
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-206AB, TO-46-3 Metal Can
500 mW
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
60 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
-
TO-46 (TO-206AB)
-
JANS2N3765U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, No Lead
500 mW
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
60 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
-
U4
-
JANTX2N3762L
TRANS PNP 40V 1.5A TO5
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-205AA, TO-5-3 Metal Can
1 W
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
40 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
-
TO-5AA
-
JANTX2N3763L
TRANS PNP 60V 1.5A TO5
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-205AA, TO-5-3 Metal Can
1 W
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
60 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
-
TO-5AA
-
JANTX2N3763U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, No Lead
1 W
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
60 V
900mV @ 100mA, 1A
10µA (ICBO)
20 @ 1A, 1.5V
-
U4
-
JANTX2N3764
TRANS PNP 40V 1.5A TO46
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-206AB, TO-46-3 Metal Can
500 mW
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
40 V
900mV @ 100mA, 1A
10µA (ICBO)
30 @ 1A, 1.5V
-
TO-46 (TO-206AB)
-
JANTX2N3764U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, No Lead
500 mW
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
40 V
900mV @ 100mA, 1A
10µA (ICBO)
30 @ 1A, 1.5V
-
U4
-
JANTXV2N3762
TRANS PNP 40V 1.5A TO39
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-205AD, TO-39-3 Metal Can
1 W
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
40 V
900mV @ 100mA, 1A
10µA (ICBO)
30 @ 1A, 1.5V
-
TO-39 (TO-205AD)
-
JAN2N3763
TRANS PNP 60V 1.5A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-205AD, TO-39-3 Metal Can
1 W
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
60 V
900mV @ 100mA, 1A
10µA (ICBO)
20 @ 1A, 1.5V
-
TO-39 (TO-205AD)
-
JAN2N3763U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, No Lead
1 W
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
60 V
900mV @ 100mA, 1A
10µA (ICBO)
20 @ 1A, 1.5V
-
U4
-
JAN2N3765
TRANS PNP 60V 1.5A TO46
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-206AB, TO-46-3 Metal Can
500 mW
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
60 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
-
TO-46 (TO-206AB)
-
JANS2N3762L
TRANS PNP 40V 1.5A TO5
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-205AA, TO-5-3 Metal Can
1 W
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
40 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
-
TO-5AA
-
JANS2N3763U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, No Lead
1 W
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
60 V
900mV @ 100mA, 1A
10µA (ICBO)
20 @ 1A, 1.5V
-
U4
-
JANS2N3764U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, No Lead
500 mW
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
40 V
900mV @ 100mA, 1A
10µA (ICBO)
30 @ 1A, 1.5V
-
U4
-
JANTX2N3765U4
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, No Lead
500 mW
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
60 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
-
U4
-
JAN2N3762L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-205AA, TO-5-3 Metal Can
1 W
-55°C ~ 200°C (TJ)
-
Military, MIL-PRF-19500/396
PNP
1.5 A
40 V
900mV @ 100mA, 1A
100µA (ICBO)
40 @ 500mA, 1V
-
TO-5AA
-

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.