Military, MIL-PRF-19500/366 Series, Single Bipolar Transistors

Results:
123
Manufacturer
Series
Supplier Device Package
Package / Case
Current - Collector Cutoff (Max)
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Operating Temperature
Grade
Qualification
Transistor Type
Results remaining123
Applied Filters:
Military, MIL-PRF-19500/366
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseTransistor TypePower - MaxGradeSeriesCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionSupplier Device PackageQualification
JANS2N3498L
TRANS NPN 100V 0.5A TO5
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AA, TO-5-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
-
TO-5AA
-
JANS2N3498
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANTXV2N3498U4/TR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
50nA (ICBO)
40 @ 150mA, 10V
-
U4
-
JANKCCM2N3498
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANKCCF2N3499
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANKCCG2N3498
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANKCCG2N3501
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
300 mA
150 V
400mV @ 15mA, 150mA
10µA (ICBO)
100 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANKCCD2N3498
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANKCCD2N3499
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANKCCL2N3498
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANKCCD2N3500
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
300 mA
150 V
400mV @ 15mA, 150mA
10µA (ICBO)
40 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANKCCH2N3501
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
300 mA
150 V
400mV @ 15mA, 150mA
10µA (ICBO)
100 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANKCCH2N3498
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
MSR2N3501
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
300 mA
150 V
400mV @ 15mA, 150mA
10µA (ICBO)
100 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANKCCH2N3499
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANKCCF2N3500
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
300 mA
150 V
400mV @ 15mA, 150mA
10µA (ICBO)
40 @ 150mA, 10V
-
TO-39 (TO-205AD)
-
JANS2N3501L
TRANS NPN 150V 0.3A TO5
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AA, TO-5-3 Metal Can
NPN
1 W
-
Military, MIL-PRF-19500/366
300 mA
150 V
400mV @ 15mA, 150mA
10µA (ICBO)
100 @ 150mA, 10V
-
TO-5AA
-
JAN2N3498UB/TR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
40 @ 150mA, 10V
-
UB
-
JAN2N3499UB/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
-
UB
-
JANTXV2N3499UB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
NPN
1 W
-
Military, MIL-PRF-19500/366
500 mA
100 V
600mV @ 30mA, 300mA
10µA (ICBO)
100 @ 150mA, 10V
-
UB
-

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.