Military, MIL-PRF-19500/357 Series, Single Bipolar Transistors

Results:
120
Manufacturer
Series
Supplier Device Package
Package / Case
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency - Transition
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Power - Max
Current - Collector Cutoff (Max)
Operating Temperature
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
Grade
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Transistor Type
Results remaining120
Applied Filters:
Military, MIL-PRF-19500/357
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CasePower - MaxSeriesTransistor TypeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionSupplier Device Package
JANTXV2N3635
TRANS PNP 140V 1A TO39
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANTX2N3635UB
TRANS PNP 140V 1A 3SMD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1.5 W
Military, MIL-PRF-19500/357
PNP
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
3-SMD
JANSD2N3635
TRANS PNP 140V 10UA TO39
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANSL2N3635
TRANS PNP 140V 10UA TO39
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAM2N3636
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
175 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAL2N3636
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
175 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAM2N3637
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
175 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAD2N3637
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
175 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAM2N3634
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
140 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAP2N3635
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAD2N3634
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
140 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAD2N3636
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
175 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAP2N3637
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
175 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAP2N3636
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
175 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANTXV2N3637P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
175 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANS2N3637UB/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
1.5 W
Military, MIL-PRF-19500/357
PNP
1 A
175 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
UB
JANTXV2N3634UB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
1 W
Military, MIL-PRF-19500/357
PNP
1 A
140 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
-
UB
JANKCAP2N3634
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
140 V
600mV @ 5mA, 50mA
10µA
50 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAM2N3635
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
TO-39 (TO-205AD)
JANKCAD2N3635
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
1 W
Military, MIL-PRF-19500/357
PNP
1 A
140 V
600mV @ 5mA, 50mA
10µA
100 @ 50mA, 10V
-
TO-39 (TO-205AD)

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.