Military, MIL-PRF-19500/350 Series, Single Bipolar Transistors

Results:
11
Manufacturer
Series
Supplier Device Package
Package / Case
DC Current Gain (hFE) (Min) @ Ic, Vce
Operating Temperature
Current - Collector (Ic) (Max)
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Current - Collector Cutoff (Max)
Frequency - Transition
Vce Saturation (Max) @ Ib, Ic
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Results remaining11
Applied Filters:
Military, MIL-PRF-19500/350
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureSupplier Device PackagePackage / CaseCurrent - Collector (Ic) (Max)Power - MaxSeriesTransistor TypeVoltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - Transition
JAN2N3867
TRANS PNP 40V 0.003A TO5
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-5
TO-205AA, TO-5-3 Metal Can
3 mA
1 W
Military, MIL-PRF-19500/350
PNP
40 V
1.5V @ 250mA, 2.5A
100µA (ICBO)
40 @ 1.5A, 2V
-
JANTXV2N3867
TRANS PNP 40V 0.003A TO5
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-5
TO-205AA, TO-5-3 Metal Can
3 mA
1 W
Military, MIL-PRF-19500/350
PNP
40 V
1.5V @ 250mA, 2.5A
100µA (ICBO)
40 @ 1.5A, 2V
-
JANS2N3867
TRANS PNP 40V 0.003A TO5
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-5
TO-205AA, TO-5-3 Metal Can
3 mA
1 W
Military, MIL-PRF-19500/350
PNP
40 V
1.5V @ 250mA, 2.5A
100µA (ICBO)
40 @ 1.5A, 2V
-
JANS2N3867S
TRANS PNP 40V 0.003A TO39
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-39 (TO-205AD)
TO-205AD, TO-39-3 Metal Can
3 mA
1 W
Military, MIL-PRF-19500/350
PNP
40 V
1.5V @ 250mA, 2.5A
100µA (ICBO)
40 @ 1.5A, 2V
-
JANTX2N3867P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 200°C
TO-5AA
TO-205AA, TO-5-3 Metal Can
3 A
1 W
Military, MIL-PRF-19500/350
PNP
40 V
1.5V @ 250mA, 2.5A
1µA
50 @ 500mA, 1V
-
JAN2N3867P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 200°C
TO-5AA
TO-205AA, TO-5-3 Metal Can
3 A
1 W
Military, MIL-PRF-19500/350
PNP
40 V
1.5V @ 250mA, 2.5A
1µA
50 @ 500mA, 1V
-
JANTX2N3868U4
TRANS PNP 60V 0.003A UB
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
U4
3-SMD, No Lead
3 mA
1 W
Military, MIL-PRF-19500/350
PNP
60 V
1.5V @ 250mA, 2.5A
100µA (ICBO)
30 @ 1.5A, 2V
-
JANTXV2N3868U4
TRANS PNP 60V 0.003A UB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
U4
3-SMD, No Lead
3 mA
1 W
Military, MIL-PRF-19500/350
PNP
60 V
1.5V @ 250mA, 2.5A
100µA (ICBO)
30 @ 1.5A, 2V
-
JANS2N3868S
TRANS PNP 60V 0.003A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-39 (TO-205AD)
TO-205AD, TO-39-3 Metal Can
3 mA
1 W
Military, MIL-PRF-19500/350
PNP
60 V
1.5V @ 250mA, 2.5A
100µA (ICBO)
30 @ 1.5A, 2V
-
JAN2N3868U4
TRANS PNP 60V 0.003A UB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
U4
3-SMD, No Lead
3 mA
1 W
Military, MIL-PRF-19500/350
PNP
60 V
1.5V @ 250mA, 2.5A
100µA (ICBO)
30 @ 1.5A, 2V
-
JANTXV2N3867P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 200°C
TO-5AA
TO-205AA, TO-5-3 Metal Can
3 A
1 W
Military, MIL-PRF-19500/350
PNP
40 V
1.5V @ 250mA, 2.5A
1µA
50 @ 500mA, 1V
-

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.