Military, MIL-PRF-19500/323 Series, Single Bipolar Transistors

Results:
11
Manufacturer
Series
Package / Case
Mounting Type
Supplier Device Package
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
Grade
Voltage - Collector Emitter Breakdown (Max)
Qualification
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Power - Max
Results remaining11
Applied Filters:
Military, MIL-PRF-19500/323
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseVoltage - Collector Emitter Breakdown (Max)Power - MaxSupplier Device PackageGradeSeriesTransistor TypeCurrent - Collector (Ic) (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionQualification
JANTXV2N3250AUB/TR
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
360 mW
UB
-
Military, MIL-PRF-19500/323
PNP
200 mA
500mV @ 5mA, 50mA
20nA
50 @ 10mA, 1V
-
-
JANTXV2N3251A
TRANS PNP 60V 0.2A TO39
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
60 V
360 mW
TO-39 (TO-205AD)
-
Military, MIL-PRF-19500/323
PNP
200 mA
500mV @ 5mA, 50mA
10µA (ICBO)
100 @ 10mA, 1V
-
-
JAN2N3250AUB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
60 V
360 mW
UB
-
Military, MIL-PRF-19500/323
PNP
200 mA
500mV @ 5mA, 50mA
10µA (ICBO)
50 @ 10mA, 1V
-
-
JAN2N3251AUB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
360 mW
UB
Military, MIL-PRF-19500/323
PNP
200 mA
500mV @ 5mA, 50mA
10µA (ICBO)
100 @ 10mA, 1V
-
JANTX2N3251AUB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
360 mW
UB
Military, MIL-PRF-19500/323
PNP
200 mA
500mV @ 5mA, 50mA
10µA (ICBO)
100 @ 10mA, 1V
-
JANTXV2N3251AUB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
360 mW
UB
Military, MIL-PRF-19500/323
PNP
200 mA
500mV @ 5mA, 50mA
10µA (ICBO)
100 @ 10mA, 1V
-
JANTX2N3250AUB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
60 V
360 mW
UB
-
Military, MIL-PRF-19500/323
PNP
200 mA
500mV @ 5mA, 50mA
10µA (ICBO)
50 @ 10mA, 1V
-
-
JANTXV2N3250A
TRANS PNP 60V 0.2A TO39
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-205AD, TO-39-3 Metal Can
60 V
360 mW
TO-39 (TO-205AD)
-
Military, MIL-PRF-19500/323
PNP
200 mA
500mV @ 5mA, 50mA
10µA (ICBO)
50 @ 10mA, 1V
-
-
JANTXV2N3250AUB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
60 V
360 mW
UB
-
Military, MIL-PRF-19500/323
PNP
200 mA
500mV @ 5mA, 50mA
10µA (ICBO)
50 @ 10mA, 1V
-
-
JAN2N3250AUB/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
60 V
360 mW
UB
-
Military, MIL-PRF-19500/323
PNP
200 mA
500mV @ 5mA, 50mA
10µA (ICBO)
50 @ 10mA, 1V
-
-
JANTX2N3250AUB/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
60 V
360 mW
UB
-
Military, MIL-PRF-19500/323
PNP
200 mA
500mV @ 5mA, 50mA
10µA (ICBO)
50 @ 10mA, 1V
-
-

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.