Military, MIL-PRF-19500/291 Series, Single Bipolar Transistors

Results:
141
Manufacturer
Series
Supplier Device Package
Package / Case
DC Current Gain (hFE) (Min) @ Ic, Vce
Operating Temperature
Mounting Type
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
Grade
Voltage - Collector Emitter Breakdown (Max)
Qualification
Transistor Type
Power - Max
Current - Collector Cutoff (Max)
Results remaining141
Applied Filters:
Military, MIL-PRF-19500/291
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseVoltage - Collector Emitter Breakdown (Max)Power - MaxSupplier Device PackageGradeSeriesTransistor TypeCurrent - Collector (Ic) (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionQualification
JANSR2N2907AUBC/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
500 mW
UBC
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
JANSM2N2906AUBC/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
500 mW
UBC
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
-
-
JANSR2N2906AUBC/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
500 mW
UBC
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
-
-
JANSL2N2906AUBC
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
500 mW
UBC
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
-
-
JANSP2N2907AUBC
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
500 mW
UBC
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
JANSG2N2907AUBC
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
500 mW
UBC
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
JANSD2N2907AUBC
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
500 mW
UBC
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
JANS2N2907AUB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
60 V
500 mW
UB
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
JANTX2N2907AUBC
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
500 mW
UBC
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
JANS2N2906A
TRANS PNP 60V 0.6A TO18
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-206AA, TO-18-3 Metal Can
60 V
500 mW
TO-18 (TO-206AA)
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
-
-
JANS2N2906AL
TRANS PNP 60V 0.6A TO18
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-206AA, TO-18-3 Metal Can
60 V
500 mW
TO-18 (TO-206AA)
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
-
-
MSR2N2907AL
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-206AA, TO-18-3 Metal Can
60 V
500 mW
TO-18 (TO-206AA)
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
MVR2N2907AUA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
60 V
500 mW
UA
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
JANKCBM2N2907A
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-206AA, TO-18-3 Metal Can
60 V
500 mW
TO-18 (TO-206AA)
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
JANKCDR2N2907A
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-206AA, TO-18-3 Metal Can
60 V
500 mW
TO-18 (TO-206AA)
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
MSR2N2907A
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-206AA, TO-18-3 Metal Can
60 V
500 mW
TO-18 (TO-206AA)
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
JANKCBD2N2907A
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
TO-206AA, TO-18-3 Metal Can
60 V
500 mW
TO-18 (TO-206AA)
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
JANKCBL2N2906A
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C
TO-206AA, TO-18-3 Metal Can
60 V
500 mW
TO-18 (TO-206AA)
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
40 @ 150mA, 10V
-
-
MSR2N2907AUA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
4-SMD, No Lead
60 V
500 mW
UA
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-
MSR2N2907AUB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
3-SMD, No Lead
60 V
500 mW
UB
-
Military, MIL-PRF-19500/291
PNP
600 mA
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
-

About  Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.