BC846xW Series, Single Bipolar Transistors

Results:
12
Manufacturer
Series
Supplier Device Package
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Collector Emitter Breakdown (Max)
Transistor Type
Package / Case
Current - Collector Cutoff (Max)
Grade
Mounting Type
Qualification
Results remaining12
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BC846xW
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeTransistor TypeOperating TemperatureCurrent - Collector (Ic) (Max)Power - MaxPackage / CaseSupplier Device PackageGradeSeriesVoltage - Collector Emitter Breakdown (Max)Vce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionQualification
BC846W,115
TRANS NPN 65V 0.1A SOT323
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
2,265 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
NPN
150°C (TJ)
100 mA
200 mW
SC-70, SOT-323
SOT-323
-
BC846xW
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
100MHz
-
BC846BW/ZLF
TRANS NPN 65V 0.1A 6TSSOP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-
-
-
6-TSSOP, SC-88, SOT-363
6-TSSOP
-
BC846xW
-
-
-
-
-
-
BC846BW/ZLX
TRANS NPN 65V 0.1A 6TSSOP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-
-
-
-
6-TSSOP, SC-88, SOT-363
6-TSSOP
-
BC846xW
-
-
-
-
-
-
BC846BW/DG/B4F
TRANS NPN 65V 0.1A SOT323
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
NPN
150°C (TJ)
100 mA
250 mW
SC-70, SOT-323
SOT-323
-
BC846xW
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
100MHz
-
BC846BW/DG/B4X
TRANS NPN 65V 0.1A SC70
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
NPN
150°C (TJ)
100 mA
250 mW
SC-70, SOT-323
SC-70
-
BC846xW
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
100MHz
-
BC846BW/DG/B2,115
TRANS NPN 65V 0.1A SOT323
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
NPN
150°C (TJ)
100 mA
200 mW
SC-70, SOT-323
SOT-323
-
BC846xW
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
100MHz
-
BC846BW/DG/B2,135
TRANS NPN 65V 0.1A SOT323
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
NPN
150°C (TJ)
100 mA
200 mW
SC-70, SOT-323
SOT-323
-
BC846xW
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
100MHz
-
BC846BW/DG/B3F
TRANS NPN 65V 0.1A SOT323
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
NPN
150°C (TJ)
100 mA
250 mW
SC-70, SOT-323
SOT-323
-
BC846xW
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
100MHz
-
BC846BW/DG/B3X
TRANS NPN 65V 0.1A SOT323
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
NPN
150°C (TJ)
100 mA
250 mW
SC-70, SOT-323
SOT-323
-
BC846xW
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
100MHz
-
BC846AW,135
TRANS NPN 65V 0.1A SOT323
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
NPN
150°C (TJ)
100 mA
200 mW
SC-70, SOT-323
SOT-323
-
BC846xW
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
100MHz
-
BC846W,135
TRANS NPN 65V 0.1A SOT323
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
NPN
150°C (TJ)
100 mA
200 mW
SC-70, SOT-323
SOT-323
-
BC846xW
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
100MHz
-
BC846BW,135
TRANS NPN 65V 0.1A SOT323
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
NPN
150°C (TJ)
100 mA
200 mW
SC-70, SOT-323
SOT-323
-
BC846xW
65 V
400mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
100MHz
-

Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.