Military, MIL-PRF-19500 Series, Single Bipolar Transistors

Results:
13
Manufacturer
Series
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Package / Case
Current - Collector Cutoff (Max)
Frequency - Transition
Mounting Type
Transistor Type
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Operating Temperature
Grade
Qualification
Results remaining13
Applied Filters:
Military, MIL-PRF-19500
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureTransistor TypePackage / CaseVoltage - Collector Emitter Breakdown (Max)SeriesPower - MaxSupplier Device PackageGradeVce Saturation (Max) @ Ib, IcCurrent - Collector Cutoff (Max)DC Current Gain (hFE) (Min) @ Ic, VceFrequency - TransitionCurrent - Collector (Ic) (Max)Qualification
MSR2N2369AUBC/TR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
NPN
3-SMD, No Lead
15 V
Military, MIL-PRF-19500
360 mW
UBC
-
250mV @ 3mA, 30mA
400nA
40 @ 10mA, 1V
-
-
-
MSR2N3700UB/TR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
NPN
3-SMD, No Lead
80 V
Military, MIL-PRF-19500
500 mW
UB
-
500mV @ 50mA, 500mA
10nA
100 @ 150mA, 10V
-
1 A
-
MSR2N2369AUBC
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
NPN
3-SMD, No Lead
15 V
Military, MIL-PRF-19500
360 mW
UBC
-
250mV @ 3mA, 30mA
400nA
40 @ 10mA, 1V
-
-
-
MSR2N3700UB
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
NPN
3-SMD, No Lead
80 V
Military, MIL-PRF-19500
500 mW
UB
-
500mV @ 50mA, 500mA
10nA
100 @ 150mA, 10V
-
1 A
-
MSR2N3700
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
TO-206AA, TO-18-3 Metal Can
80 V
Military, MIL-PRF-19500
500 mW
TO-18 (TO-206AA)
-
500mV @ 50mA, 500mA
10nA
100 @ 150mA, 10V
-
1 A
-
MSR2N2222A
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
TO-206AA, TO-18-3 Metal Can
50 V
Military, MIL-PRF-19500
500 mW
TO-18 (TO-206AA)
-
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
800 mA
-
MSR2N2369AUA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
NPN
4-SMD, No Lead
15 V
Military, MIL-PRF-19500
360 mW
UA
-
250mV @ 3mA, 30mA
400nA
40 @ 10mA, 1V
-
-
-
MSR2N2222AL
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 200°C (TJ)
NPN
TO-206AA, TO-18-3 Metal Can
50 V
Military, MIL-PRF-19500
500 mW
TO-18 (TO-206AA)
-
1V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
800 mA
-
MSR2N2369AUB
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
NPN
3-SMD, No Lead
15 V
Military, MIL-PRF-19500
360 mW
UB
-
250mV @ 3mA, 30mA
400nA
40 @ 10mA, 1V
-
-
-
MSR2N2369AUA/TR
Contact us
Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
NPN
4-SMD, No Lead
15 V
Military, MIL-PRF-19500
360 mW
UA
-
250mV @ 3mA, 30mA
400nA
40 @ 10mA, 1V
-
-
-
MSR2N2369AUB/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
NPN
3-SMD, No Lead
15 V
Military, MIL-PRF-19500
360 mW
UB
-
250mV @ 3mA, 30mA
400nA
40 @ 10mA, 1V
-
-
-
JANTXVR2N2907AUB
RH SMALL-SIGNAL BJT _ UB
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
PNP
3-SMD, No Lead
60 V
Military, MIL-PRF-19500
500 mW
UB
-
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
600 mA
-
JANTXVR2N2907AUB/TR
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-65°C ~ 200°C (TJ)
PNP
3-SMD, No Lead
60 V
Military, MIL-PRF-19500
500 mW
UB
-
1.6V @ 50mA, 500mA
50nA
100 @ 150mA, 10V
-
600 mA
-

Single Bipolar Transistors

Discrete bipolar junction transistors (BJTs) are frequently used in constructing analog signal amplifiers for applications such as audio and radio. As one of the earliest semiconductor devices to be mass-produced, their characteristics are not ideal for high frequency switching and high current or voltage operation, but they remain a popular choice for applications that require minimal noise and distortion when reproducing analog signals. The structure of a BJT consists of three doped semiconductor regions: the emitter, base, and collector. The base is sandwiched between the emitter and the collector, forming two p-n junctions. The base region is thin and lightly doped compared to the emitter and collector regions, to allow for control of the device's conductivity. BJTs can be characterized by their gain, bandwidth, collector-emitter saturation voltage, and breakdown voltage. The gain is the ratio of the output current to the input current, while bandwidth refers to the range of frequencies within which the transistor operates effectively. Collector-emitter saturation voltage is the voltage drop across the collector-emitter terminals when the transistor is switched on, and breakdown voltage is the maximum voltage that the transistor can withstand without suffering damage. Compared to other device types, BJTs have less favorable characteristics for high frequency switching and high current/voltage operation. However, they are still commonly used in applications requiring analog signal amplification with minimal noise and distortion. This is due to the fact that they have relatively low input and output impedance, making them ideal for use in circuits that require matching or buffering. In summary, discrete bipolar junction transistors (BJTs) are widely used in constructing analog signal amplifiers for applications such as audio and radio. While their characteristics may not be optimal for high frequency or high current/voltage applications, they remain a popular choice for applications requiring minimal noise and distortion when reproducing analog signals.