Phototransistors

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848
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Series
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Current - Collector (Ic) (Max)
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ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeOperating TemperaturePower - MaxPackage / CaseWavelengthViewing AngleOrientationGradeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)Current - Dark (Id) (Max)Qualification
HST9-B350
CHIP,TOP MT,PT,940NM
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Quantity
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PCB Symbol, Footprint & 3D Model
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PT26-21B/CT
SENSOR PHOTODIODE LINEAR IC
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-25°C ~ 85°C
75 mW
1206 (3216 Metric)
840nm
-
Top View
-
20 mA
30 V
50 nA
-
EAPST17086A0
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-25°C ~ 85°C
75 mW
0603 (1608 Metric)
940nm
-
Top View
-
20 mA
30 V
100 nA
-
PT19-315B/TR8
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-25°C ~ 85°C
75 mW
0603 (1608 Metric)
940nm
-
Top View
-
20 mA
30 V
100 nA
-
EAPLP03RDAA0
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-25°C ~ 85°C
75 mW
Radial
940nm
-
Top View
-
20 mA
30 V
100 nA
-
LTR-350AB
PT/IR LTR-350 PTD SIDE LOOKING
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Quantity
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PCB Symbol, Footprint & 3D Model
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EAPLP03RDAA2
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-25°C ~ 85°C
75 mW
Radial
940nm
-
Top View
-
20 mA
30 V
100 nA
-
HSD9-C118
CHIP,TOP MT,PD,940NM
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Quantity
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PCB Symbol, Footprint & 3D Model
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LTR-301-002
PT/IR LTR-301-002 PTR SIDE LOOKI
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Quantity
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PCB Symbol, Footprint & 3D Model
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HST9-C350
CHIP,TOP MT,PT,940NM
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Quantity
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PCB Symbol, Footprint & 3D Model
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HLPT-B5D0-00000
IR PT LAMP,5MM, 960NM,20DEG
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Quantity
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PCB Symbol, Footprint & 3D Model
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Through Hole
-40°C ~ 85°C
150 mW
Radial
830nm
20°
Top View
-
30 mA
30 V
100 nA
-
HSD9-B680
CHIP,R/ANGLE, PD,940NM
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Quantity
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PCB Symbol, Footprint & 3D Model
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HST6-C190
CHIP,TOP MT,PT,630NM
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Quantity
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PCB Symbol, Footprint & 3D Model
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LTR-C9303B
PT/IR LTR-C9303B SMD LED
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 85°C
100 mW
1209 (3224 Metric)
940nm
-
Top View
-
2 mA
30 V
100 nA
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T1070P-SD-F
Silicon NPN Phototransister, 570
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 100°C
-
Die
570nm
120°
Top View
-
20 mA
6 V
50 nA
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BF3H01G-NPT
Dia.3mm Phototransistor 940nm
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 80°C
75 mW
Radial
940nm
-
Top View
-
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30 V
100 nA
-
HST9-B170
CHIP,TOP MT,PT,940NM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 85°C
100 mW
0805 (2012 Metric)
940nm
140°
Top View
-
20 mA
30 V
100 nA
-
HLPT-B5G0-00000
IR PT LAMP,5MM, 960NM,50DEG
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 85°C
150 mW
Radial
830nm
50°
Top View
-
30 mA
30 V
100 nA
-
HLPT-B5K0-00000
IR PT LAMP,5MM, 960NM,80DEG
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 85°C
150 mW
Radial
830nm
80°
Top View
-
30 mA
30 V
100 nA
-
HST9-B380
CHIP,TOP MT,PT,940NM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 85°C
100 mW
1206 (3216 Metric)
940nm
32°
Top View
-
20 mA
30 V
100 nA
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About  Phototransistors

The phototransistor family consists of discrete light-sensitive components that exhibit similar behavior to bipolar transistors. However, unlike bipolar transistors that rely on an electrical current applied through a device terminal, phototransistors utilize incident light to induce conduction. Phototransistors offer several advantages compared to photodiodes. One notable advantage is that they generally generate a larger output current in response to the same intensity of incident light. This higher output current makes phototransistors more suitable for applications where a higher signal strength is desired. On the other hand, phototransistors have a slower response time to changes in light intensity compared to photodiodes. This means that they may not be as well-suited for high-speed operations that require rapid detection and response to light variations. Due to their simpler application and higher output current capabilities, phototransistors are often preferred in situations where simplicity and signal strength are more critical than speed. They find common use in applications such as ambient light sensing, optical switches, encoders, and remote control systems. It is important to consider the specific requirements of a given application when selecting between phototransistors and photodiodes, taking into account factors such as sensitivity, response time, and signal strength. By understanding the unique characteristics and trade-offs of phototransistors, engineers can make informed decisions to optimize their designs for different light sensing scenarios.