VTT Series, Phototransistors

Results:
9
Manufacturer
Series
Viewing Angle
Current - Collector (Ic) (Max)
Operating Temperature
Package / Case
Current - Dark (Id) (Max)
Wavelength
Power - Max
Grade
Orientation
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Qualification
Results remaining9
Applied Filters:
VTT
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ImageProduct DetailPriceAvailabilityECAD ModelOperating TemperatureMounting TypePower - MaxWavelengthPackage / CaseViewing AngleSeriesVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Current - Dark (Id) (Max)OrientationGradeQualification
VTT3425LAH
SENSOR PHOTO TOP VIEW RADIAL
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-
-
Radial
10°
VTT
30 V
3 mA
100 nA
Top View
-
-
VTT9812FH
SENSOR PHOTO TOP VIEW T1 3/4
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-
585nm
T 1 3/4
56°
VTT
30 V
100 µA
100 nA
Top View
-
-
VTT9814FH
PHOTOTRANSISTOR T1-3/4 EPOXY
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Quantity
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PCB Symbol, Footprint & 3D Model
-40°C ~ 100°C
Through Hole
50 mW
585nm
Radial
50°
VTT
30 V
100 µA
50 nA
Top View
-
-
VTT1314H
SENSOR PHOTO TOP VIEW T1 3/4
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Quantity
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PCB Symbol, Footprint & 3D Model
-40°C ~ 100°C (TA)
Through Hole
-
-
T 1 3/4
20°
VTT
30 V
2.4 mA
100 nA
Top View
-
-
VTT9102H
SENSOR PHOTO TOP TO106-3 DOMED
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-
-
TO-106-3 Domed
42°
VTT
30 V
6 mA
100 nA
Top View
-
-
VTT1225H
SENSOR PHOTO TOP VIEW RADIAL
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-
-
Radial
10°
VTT
30 V
100 µA
100 nA
Top View
-
-
VTT1227H
SENSOR PHOTO TOP VIEW RADIAL
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-
-
Radial
10°
VTT
30 V
100 µA
100 nA
Top View
-
-
VTT9103H
SENSOR PHOTO TOP VIEW RADIAL
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-
-
Radial
84°
VTT
30 V
100 µA
100 nA
Top View
-
-
VTT3323LAH
SENSOR PHOTO TOP VIEW RADIAL
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-
-
Radial
20°
VTT
30 V
100 µA
100 nA
Top View
-
-

About  Phototransistors

The phototransistor family consists of discrete light-sensitive components that exhibit similar behavior to bipolar transistors. However, unlike bipolar transistors that rely on an electrical current applied through a device terminal, phototransistors utilize incident light to induce conduction. Phototransistors offer several advantages compared to photodiodes. One notable advantage is that they generally generate a larger output current in response to the same intensity of incident light. This higher output current makes phototransistors more suitable for applications where a higher signal strength is desired. On the other hand, phototransistors have a slower response time to changes in light intensity compared to photodiodes. This means that they may not be as well-suited for high-speed operations that require rapid detection and response to light variations. Due to their simpler application and higher output current capabilities, phototransistors are often preferred in situations where simplicity and signal strength are more critical than speed. They find common use in applications such as ambient light sensing, optical switches, encoders, and remote control systems. It is important to consider the specific requirements of a given application when selecting between phototransistors and photodiodes, taking into account factors such as sensitivity, response time, and signal strength. By understanding the unique characteristics and trade-offs of phototransistors, engineers can make informed decisions to optimize their designs for different light sensing scenarios.