Photo Detectors - CdS Cells

Results:
75
Manufacturer
Series
Cell Resistance @ Illuminance
Cell Resistance (Min) @ Dark
Voltage - Max
Rise Time (Typ)
Wavelength
Operating Temperature
Fall Time (Typ)
Supplier Device Package
Package / Case
Mounting Type
Results remaining75
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ImageProduct DetailPriceAvailabilityECAD ModelSeriesSupplier Device PackageMounting TypePackage / CaseWavelengthVoltage - MaxRise Time (Typ)Fall Time (Typ)Cell Resistance (Min) @ DarkCell Resistance @ IlluminanceOperating Temperature
PDV-P9203
CDS PHOTORES 10K-30KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
70 ms
15 ms
5 MOhms @ 10 s
10 ~ 30kOhms @ 10 lux
-30°C ~ 75°C (TA)
NSL-4140
CDS PHOTORESISTOR 250OHM TO-18
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Quantity
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PCB Symbol, Footprint & 3D Model
-
TO-18
Through Hole
Radial
550nm
100Vpk
-
-
800 kOhms @ 5 s
8.4 ~ 19.6kOhms @ 10 lux
-60°C ~ 75°C (TA)
NSL-4960
CDS PHOTORESISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
-
TO-8
Through Hole
Radial
515nm
320Vpk
-
-
1 MOhms @ 5 s
0.5 ~ 17kOhms @ 10 lux
-60°C ~ 75°C (TA)
PDV-P9006
CDS PHOTORES 80K-200KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
60 ms
25 ms
5 MOhms @ 10 s
80 ~ 200kOhms @ 10 lux
-30°C ~ 75°C (TA)
PDV-P9002-1
CDS PHOTORES 11K-27KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
60 ms
25 ms
500 kOhms @ 10 s
11 ~ 27kOhms @ 10 lux
-30°C ~ 75°C (TA)
PDV-P9001
CDS PHOTORESIST 4K-11KOHM 4.20MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
60 ms
25 ms
300 kOhms @ 10 s
4 ~ 11kOhms @ 10 lux
-25°C ~ 75°C (TA)
PDV-P8101
CDS PHOTORESIST 4K-11KOHM 5.10MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
55 ms
20 ms
150 kOhms @ 10 s
4 ~ 11kOhms @ 10 lux
-30°C ~ 75°C (TA)
NSL-5510
CDS PHOTORES TYPE 5 FLAT TO-5
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Quantity
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PCB Symbol, Footprint & 3D Model
-
TO-5
Through Hole
Radial
550nm
120Vpk
-
-
220 kOhms @ 5 s
2.2 ~ 4.4kOhms @ 21 lux
-60°C ~ 75°C (TA)
PDV-P8102
CDS PHOTORESIST 9K-20KOHM 5.10MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
150Vpk
60 ms
25 ms
300 kOhms @ 10 s
9 ~ 20kOhms @ 10 lux
-30°C ~ 75°C (TA)
PDV-P2001
CDS PHOTORES 100K-200KOHM .89MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
-
-
-
-
-
100 ~ 200kOhms @ 10 lux
-
PDV-P7003
CDS PHOTORESIST 8K-24KOHM 7.2MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
350VDC
55 ms
20 ms
500 kOhms @ 10 s
8 ~ 24kOhms @ 10 lux
-
PDV-P7004
CDS PHOTORESIST 15K-60KOHM 7.2MM
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
520nm
350VDC
60 ms
25 ms
500 kOhms @ 10 s
15 ~ 60kOhm @ 10 lux
-
350-00009
PHOTORESISTOR FOR BASIC STAMP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
Through Hole
Radial
-
100Vpk
35 ms
5 ms
1 MOhms @ 5 s
20 ~ 38kOhms @ 10 lux
-40°C ~ 75°C (TA)
SEN-09088
MINI PHOTOCELL
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Radial
Through Hole
Radial
540nm
150V
-
-
1 MOhms @ 10 s
8 ~ 20kOhms @ 10 lux
-30°C ~ 70°C (TA)
PART PHOTORESISTOR
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
-
-
-
-
-
-
-
-
-

Photo Detectors - CdS Cells

Cadmium sulfide (CdS) photodetectors, commonly referred to as photoresistors, light-dependent resistors (LDRs), or photo-conductive cells, are semiconductor devices with high resistance that exhibit variable resistance based on incident light intensity. These devices are widely used in applications where light detection and control are required. The fundamental operation of a CdS photodetector is based on the principle of photoconductivity. When no light is present, the CdS material has a high resistance, limiting the flow of electric current. However, when exposed to light, the photons excite electrons in the CdS, causing them to migrate and reducing the resistance of the material. As a result, the device acts as a light-controlled variable resistor. Photoresistors are selected based on various characteristics, including cell resistance, maximum voltage, and rise and fall times. The cell resistance determines the initial resistance of the device in darkness, while the maximum voltage specifies the highest voltage that can be applied across the photoresistor without damaging it. Rise and fall times refer to the speed at which the resistance changes when the light intensity increases or decreases. These photodetectors find applications in diverse fields, including light sensing, automatic lighting control, burglar alarms, camera exposure control, and robotics. Their ability to detect and respond to changes in light intensity makes them useful in situations where automatic adjustments or triggering based on ambient light conditions are required. In summary, CdS photodetectors, also called photoresistors or LDRs, are semiconductor devices with high resistance that vary their resistance based on incident light intensity. They operate on the principle of photoconductivity, with the resistance decreasing as the light intensity increases. Photoresistors are chosen based on characteristics such as cell resistance, maximum voltage, and rise and fall times. These devices have numerous applications in light sensing, automatic control systems, burglar alarms, and more, where their light-dependent resistance enables responsive adjustments to ambient light conditions.