FLEXMOS™ Series, Gate Drivers

Results:
4
Manufacturer
Series
Supplier Device Package
Package / Case
Rise / Fall Time (Typ)
Number of Drivers
Operating Temperature
Driven Configuration
Grade
Qualification
Channel Type
High Side Voltage - Max (Bootstrap)
Logic Voltage - VIL, VIH
Input Type
Gate Type
Mounting Type
Current - Peak Output (Source, Sink)
Voltage - Supply
Results remaining4
Applied Filters:
FLEXMOS™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeVoltage - SupplyOperating TemperaturePackage / CaseSupplier Device PackageInput TypeSeriesDriven ConfigurationChannel TypeNumber of DriversGate TypeLogic Voltage - VIL, VIHCurrent - Peak Output (Source, Sink)Rise / Fall Time (Typ)High Side Voltage - Max (Bootstrap)GradeQualification
NCV7520FPR2G
IC GATE DRVR LOW-SIDE 32TQFP
5+
$10.7746
10+
$10.0563
15+
$9.6972
Quantity
6,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
4.75V ~ 5.25V
-40°C ~ 150°C (TJ)
32-TQFP Exposed Pad
32-TQFP-EP (5x5)
Non-Inverting
FLEXMOS™
Low-Side
Independent
6
N-Channel MOSFET
0.8V, 2V
-
277ns (Max), 277ns (Max)
-
Automotive
AEC-Q100
NCV7520MWTXG
IC GATE DRVR LOW-SIDE 32QFN
5+
$570.4225
10+
$532.3944
15+
$513.3803
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
4.75V ~ 5.25V
-40°C ~ 150°C (TJ)
32-VFQFN Exposed Pad
32-QFN (5x5)
Non-Inverting
FLEXMOS™
Low-Side
Independent
6
N-Channel MOSFET
0.8V, 2V
-
277ns (Max), 277ns (Max)
-
Automotive
AEC-Q100
NCV7512FTR2G
IC GATE DRVR LOW-SIDE 32LQFP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
4.75V ~ 5.25V
-40°C ~ 150°C (TJ)
32-LQFP
32-LQFP (7x7)
Non-Inverting
FLEXMOS™
Low-Side
Independent
4
N-Channel MOSFET
0.8V, 2V
-
1.4µs, 1.4µs (Max)
-
Automotive
AEC-Q100
NCV7510DWR2G
IC GATE DRVR HIGH-SIDE 20SOIC
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
4.75V ~ 5.25V
-40°C ~ 125°C (TJ)
20-SOIC (0.295", 7.50mm Width)
20-SOIC
Non-Inverting
FLEXMOS™
High-Side
Single
1
N-Channel MOSFET
0.8V, 2.2V
-
-
50 V
-
-

About  Gate Drivers

Gate Drivers are a combination of electronic components that work together to facilitate power management and control in various applications. Specifically, gate drivers are a type of IC that provide the necessary functions to interface control signals from a control device to semiconductor devices like FETs (Field-Effect Transistors) or IGBTs (Insulated Gate Bipolar Transistors) in power conversion applications. The primary purpose of gate drivers is to enable the control and switching of power flow through these semiconductor devices. They achieve this by providing functions such as isolation, amplification, reference shifting, bootstrapping, and other essential operations that ensure seamless signal transmission between the control device and the semiconductor devices. Isolation is crucial to prevent any interference or feedback between the control circuitry and the power circuitry, ensuring safety and stability in the system. Amplification allows the control signals to reach the necessary voltage or current levels required to drive the semiconductor devices effectively. Reference shifting ensures that the control signals align with the specific voltage levels of the semiconductor devices. Bootstrapping helps to enhance the efficiency of the gate drivers by utilizing energy from the power supply to boost the gate drive voltage. By providing these functionalities, gate driver PMICs enable precise control over power flow and efficient switching of semiconductor devices, resulting in optimized performance and reliability of power conversion systems. They are commonly used in motor control applications, renewable energy systems, power supplies, and other power electronics applications where efficient power management is essential. Overall, Integrated Circuits - Power Management - Gate Drivers form a critical part of power conversion systems, enabling effective communication and control between the control device and the semiconductor devices. They contribute to enhanced efficiency, reliability, and performance in various power management applications.