MPQ Series, Gate Drivers

Results:
11
Manufacturer
Series
Current - Peak Output (Source, Sink)
Supplier Device Package
Package / Case
Rise / Fall Time (Typ)
Voltage - Supply
High Side Voltage - Max (Bootstrap)
Operating Temperature
Number of Drivers
Mounting Type
Channel Type
Logic Voltage - VIL, VIH
Input Type
Driven Configuration
Grade
Gate Type
Qualification
Results remaining11
Applied Filters:
MPQ
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseOperating TemperatureSeriesInput TypeVoltage - SupplyDriven ConfigurationChannel TypeNumber of DriversGate TypeLogic Voltage - VIL, VIHHigh Side Voltage - Max (Bootstrap)Rise / Fall Time (Typ)Current - Peak Output (Source, Sink)Supplier Device PackageGradeQualification
MPQ1923GR-AEC1-Z
100V, 8A, HIGH FREQUENCY HALF-BR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-VDFN Exposed Pad
-40°C ~ 125°C (TJ)
MPQ
Non-Inverting
5V ~ 17V
Half-Bridge
Independent
2
N-Channel MOSFET
-
120 V
7.2ns, 5.5ns
7A, 8A
8-QFN (4x4)
Automotive
AEC-Q100
MPQ1923GRE-AEC1-Z
100V, 8A, HIGH FREQUENCY HALF-BR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
10-VDFN Exposed Pad
-40°C ~ 125°C (TJ)
MPQ
Non-Inverting
5V ~ 17V
Half-Bridge
Independent
2
N-Channel MOSFET
-
120 V
7.2ns, 5.5ns
7A, 8A
10-QFN (4x4)
Automotive
AEC-Q100
MPQ1923GR-AEC1-P
100V, 8A, HIGH FREQUENCY HALF-BR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-VDFN Exposed Pad
-40°C ~ 125°C (TJ)
MPQ
Non-Inverting
5V ~ 17V
Half-Bridge
Independent
2
N-Channel MOSFET
-
120 V
7.2ns, 5.5ns
7A, 8A
8-QFN (4x4)
Automotive
AEC-Q100
MPQ1923GRE-AEC1-P
100V, 8A, HIGH FREQUENCY HALF-BR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount, Wettable Flank
10-VFDFN Exposed Pad
-40°C ~ 125°C (TJ)
MPQ
Non-Inverting
5V ~ 17V
Half-Bridge
Independent
2
N-Channel MOSFET
-
120 V
7.2ns, 5.5ns
7A, 8A
10-QFN (4x4)
Automotive
AEC-Q100
MPQ18024HN-AEC1-LF-Z
AUTOMOTIVE GRADE, 100V, 4A, HIGH
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
-40°C ~ 125°C (TJ)
MPQ
Non-Inverting
9V ~ 16V
Half-Bridge
Independent
2
N-Channel MOSFET
-
110 V
15ns, 9ns
3A, 4.5A
8-SOICE
Automotive
AEC-Q100
MPQ1924HS-LF-P
100V, 4A, HIGH FREQUENCY HALF-BR
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
-40°C ~ 125°C (TJ)
MPQ
Non-Inverting
9V ~ 16V
Half-Bridge
Independent
2
N-Channel MOSFET
-
115 V
15ns, 9ns
4A, 5.9A
8-SOIC
Automotive
AEC-Q100
MPQ6531GVE-AEC1-Z
5V TO 60V, THREE-PHASE BRUSHLESS
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
28-VFQFN Exposed Pad
-40°C ~ 150°C (TJ)
MPQ
Non-Inverting
5V ~ 60V
Half-Bridge
3-Phase
6
N-Channel MOSFET
0.8V, 2V
-
-
800mA, 1A
28-QFN (4x5)
Automotive
AEC-Q100
MPQ18024HN-AEC1-LF-P
AUTOMOTIVE GRADE, 100V, 4A, HIGH
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width) Exposed Pad
-40°C ~ 125°C (TJ)
MPQ
Non-Inverting
9V ~ 16V
Half-Bridge
Independent
2
N-Channel MOSFET
-
110 V
15ns, 9ns
4A, 4A
8-SOIC-EP
Automotive
AEC-Q100
MPQ6531GVE-AEC1-P
5V TO 60V, THREE-PHASE BRUSHLESS
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
28-VFQFN Exposed Pad
-40°C ~ 150°C (TJ)
MPQ
Non-Inverting
5V ~ 60V
Half-Bridge
3-Phase
6
N-Channel MOSFET
0.8V, 2V
-
-
800mA, 1A
28-QFN (4x5)
Automotive
AEC-Q100
MPQ6531GV-AEC1-P
5V TO 60V, THREE-PHASE BRUSHLESS
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
28-VFQFN Exposed Pad
-40°C ~ 150°C (TJ)
MPQ
Non-Inverting
5V ~ 60V
Half-Bridge
3-Phase
6
N-Channel MOSFET
0.8V, 2V
-
-
800mA, 1A
28-QFN (4x5)
Automotive
AEC-Q100
MPQ18021HS-A-LF-P
INDUSTRIAL GRADE, 100V, 2.5A HIG
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
-40°C ~ 125°C (TJ)
MPQ
Non-Inverting
9V ~ 18V
Half-Bridge
Independent
2
N-Channel MOSFET
-
115 V
12ns, 9ns
2.5A, 2.5A
8-SOIC
Automotive
AEC-Q100

Gate Drivers

Gate Drivers are a combination of electronic components that work together to facilitate power management and control in various applications. Specifically, gate drivers are a type of IC that provide the necessary functions to interface control signals from a control device to semiconductor devices like FETs (Field-Effect Transistors) or IGBTs (Insulated Gate Bipolar Transistors) in power conversion applications. The primary purpose of gate drivers is to enable the control and switching of power flow through these semiconductor devices. They achieve this by providing functions such as isolation, amplification, reference shifting, bootstrapping, and other essential operations that ensure seamless signal transmission between the control device and the semiconductor devices. Isolation is crucial to prevent any interference or feedback between the control circuitry and the power circuitry, ensuring safety and stability in the system. Amplification allows the control signals to reach the necessary voltage or current levels required to drive the semiconductor devices effectively. Reference shifting ensures that the control signals align with the specific voltage levels of the semiconductor devices. Bootstrapping helps to enhance the efficiency of the gate drivers by utilizing energy from the power supply to boost the gate drive voltage. By providing these functionalities, gate driver PMICs enable precise control over power flow and efficient switching of semiconductor devices, resulting in optimized performance and reliability of power conversion systems. They are commonly used in motor control applications, renewable energy systems, power supplies, and other power electronics applications where efficient power management is essential. Overall, Integrated Circuits - Power Management - Gate Drivers form a critical part of power conversion systems, enabling effective communication and control between the control device and the semiconductor devices. They contribute to enhanced efficiency, reliability, and performance in various power management applications.