EiceDRIVER™ Series, Gate Drivers

Results:
107
Manufacturer
Series
Supplier Device Package
Package / Case
Current - Peak Output (Source, Sink)
Rise / Fall Time (Typ)
Voltage - Supply
High Side Voltage - Max (Bootstrap)
Logic Voltage - VIL, VIH
Gate Type
Driven Configuration
Operating Temperature
Input Type
Channel Type
Number of Drivers
Grade
Qualification
DigiKey Programmable
Output Configuration
Load Type
Current - Peak Output
Technology
Features
Applications
Voltage - Load
Mounting Type
Rds On (Typ)
Fault Protection
Current - Output / Channel
Interface
Results remaining107
Applied Filters:
EiceDRIVER™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseOperating TemperatureSeriesGradeInput TypeDriven ConfigurationChannel TypeNumber of DriversGate TypeVoltage - SupplyLogic Voltage - VIL, VIHCurrent - Peak Output (Source, Sink)Rise / Fall Time (Typ)Supplier Device PackageHigh Side Voltage - Max (Bootstrap)Qualification
1EDN7136GXTMA1
INT. POWERSTAGE/DRIVER PG-VSON-1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
10-VFDFN Exposed Pad
-40°C ~ 125°C (TJ)
EiceDRIVER™
-
Non-Inverting
High-Side or Low-Side
Independent
2
N-Channel MOSFET
4.2V ~ 11V
-
1A, 1A
5.5ns, 5.5ns
PG-VSON-10-4
-
-
2EDN7434BXTSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-6
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Non-Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
1.4V, 1.9V
5A, 5A
8.6ns, 6ns
PG-SOT23-6-3
-
-
2EDN7433BXTSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-6
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
1.4V, 1.9V
5A, 5A
8.6ns, 6ns
PG-SOT23-6-3
-
-
2EDN7424RXTMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Non-Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
1.2V, 1.9V
4A, 4A
6.4ns, 5.4ns
PG-TSSOP-8
-
-
1EDN6550BXTSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-6
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Inverting, Non-Inverting
High-Side and Low-Side
Single
2
N-Channel MOSFET, SiC MOSFET
4.5V ~ 20V
-
5.2A, 9.4A
1ns, 1ns
PG-SOT23-6-3
400 V
-
1EDN9550BXTSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-6
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Inverting, Non-Inverting
High-Side and Low-Side
Single
2
N-Channel MOSFET, SiC MOSFET
4.5V ~ 20V
-
5.2A, 9.4A
1ns, 1ns
PG-SOT23-6
400 V
-
2EDN8523RXTMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Non-Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
1.1V, 1.98V
5A, 5A
5.3ns, 4.5ns
PG-TSSOP-8
-
-
2EDN8523GXTMA1
IC GATE DRVR LOW-SIDE 8WSON
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-WDFN Exposed Pad
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
1.1V, 1.98V
5A, 5A
5.3ns, 4.5ns
PG-WSON-8-1
-
-
2EDN7523GXTMA1
IC GATE DRVR LOW-SIDE 8WSON
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-WDFN Exposed Pad
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
-
5A, 5A
5.3ns, 4.5ns
PG-WSON-8-1
-
-
2EDN8524GXTMA1
IC GATE DRVR LOW-SIDE 8WSON
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-WDFN Exposed Pad
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Non-Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
1.1V, 1.98V
5A, 5A
5.3ns, 4.5ns
PG-WSON-8-1
-
-
2EDN7424FXTMA1
IC GATE DRVR LOW-SIDE DSO8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Non-Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
0.8V, 2.3V
4A, 4A
6.4ns, 5.4ns
PG-DSO-8-60
-
-
2EDL05I06PFXUMA1
IC GATE DRVR HALF-BRIDGE DSO8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-SOIC (0.154", 3.90mm Width)
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Non-Inverting
Half-Bridge
Independent
2
IGBT
10V ~ 20V
1.1V, 1.7V
500mA, 500mA
48ns, 24ns
PG-DSO-8
600 V
-
2EDL8012GXUMA1
INT. POWERSTAGE/DRIVER PG-VDSON-
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-VDFN Exposed Pad
-40°C ~ 125°C (TJ)
EiceDRIVER™
-
Non-Inverting
Half-Bridge
Independent
2
N-Channel MOSFET
8V ~ 17V
-
5A, 6A
-
PG-VDSON-8-4
120 V
-
2EDN7424RXUMA1
IC GATE DRVR LOW-SIDE 8TSSOP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Non-Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
0.8V, 2.3V
4A, 4A
6.4ns, 5.4ns
PG-TSSOP-8
-
-
1EDN7511BXTSA1
IC GATE DRVR LOW-SIDE SOT23-6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-6
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Inverting, Non-Inverting
Low-Side
Single
1
IGBT, N-Channel MOSFET
4.5V ~ 20V
1.2V, 1.9V
4A, 8A
-
PG-SOT23-6-2
-
-
1EDN8511BXTSA1
IC GATE DRV HALF BRD/LOW SOT23-6
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-6
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Inverting, Non-Inverting
Half-Bridge, Low-Side
Single
1
N-Channel, P-Channel MOSFET
4.5V ~ 20V
1.2V, 1.9V
4A, 8A
6.5ns, 4.5ns
PG-SOT23-6-2
-
-
2EDN8523RXUMA1
IC GATE DRVR LOW-SIDE 8TSSOP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
1.2V, 1.9V
5A, 5A
5.3ns, 4.5ns
PG-TSSOP-8
-
-
2EDN7524RXUMA1
IC GATE DRVR LOW-SIDE TSSLP-8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Non-Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
-
5A, 5A
5.3ns, 4.5ns
PG-TSSOP-8
-
-
2EDN8524RXUMA1
IC GATE DRVR LOW-SIDE 8TSSOP
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Non-Inverting
Low-Side
Independent
2
N-Channel MOSFET
4.5V ~ 20V
1.2V, 1.9V
5A, 5A
5.3ns, 4.5ns
PG-TSSOP-8
-
-
2EDL05I06PJXUMA1
IC GATE DRVR HALF-BRIDGE DSO14
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
14-SOIC (0.154", 3.90mm Width)
-40°C ~ 150°C (TJ)
EiceDRIVER™
-
Non-Inverting
Half-Bridge
Independent
2
N-Channel, P-Channel MOSFET
10V ~ 20V
1.1V, 1.7V
250mA, 500mA
48ns, 24ns
PG-DSO-14
600 V
-

About  Gate Drivers

Gate Drivers are a combination of electronic components that work together to facilitate power management and control in various applications. Specifically, gate drivers are a type of IC that provide the necessary functions to interface control signals from a control device to semiconductor devices like FETs (Field-Effect Transistors) or IGBTs (Insulated Gate Bipolar Transistors) in power conversion applications. The primary purpose of gate drivers is to enable the control and switching of power flow through these semiconductor devices. They achieve this by providing functions such as isolation, amplification, reference shifting, bootstrapping, and other essential operations that ensure seamless signal transmission between the control device and the semiconductor devices. Isolation is crucial to prevent any interference or feedback between the control circuitry and the power circuitry, ensuring safety and stability in the system. Amplification allows the control signals to reach the necessary voltage or current levels required to drive the semiconductor devices effectively. Reference shifting ensures that the control signals align with the specific voltage levels of the semiconductor devices. Bootstrapping helps to enhance the efficiency of the gate drivers by utilizing energy from the power supply to boost the gate drive voltage. By providing these functionalities, gate driver PMICs enable precise control over power flow and efficient switching of semiconductor devices, resulting in optimized performance and reliability of power conversion systems. They are commonly used in motor control applications, renewable energy systems, power supplies, and other power electronics applications where efficient power management is essential. Overall, Integrated Circuits - Power Management - Gate Drivers form a critical part of power conversion systems, enabling effective communication and control between the control device and the semiconductor devices. They contribute to enhanced efficiency, reliability, and performance in various power management applications.