MPS™ Series, RF Diodes

Results:
8
Manufacturer
Series
Current - Max
Supplier Device Package
Package / Case
Diode Type
Operating Temperature
Voltage - Peak Reverse (Max)
Capacitance @ Vr, F
Grade
Resistance @ If, F
Power Dissipation (Max)
Qualification
Results remaining8
Applied Filters:
MPS™
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ImageProduct DetailPriceAvailabilityECAD ModelOperating TemperatureGradeCurrent - MaxCapacitance @ Vr, FPackage / CaseDiode TypeResistance @ If, FPower Dissipation (Max)QualificationSeriesSupplier Device PackageVoltage - Peak Reverse (Max)
GE04MPS06Q
650V 4A PQFN 8X8 SIC SCHOTTKY MP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
4 A
-
4-PowerVSFN
Schottky - Single
-
-
-
MPS™
QFN8x8
650V
GE06MPS06Q
650V 6A PQFN 8X8 SIC SCHOTTKY MP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
6 A
-
4-PowerVSFN
Schottky - Single
-
-
-
MPS™
QFN8x8
650V
GE08MPS06Q
650V 8A PQFN 8X8 SIC SCHOTTKY MP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
8 A
-
4-PowerVSFN
Schottky - Single
-
-
-
MPS™
QFN8x8
650V
GE12MPS06E
650V 12A TO-252-2 SIC SCHOTTKY M
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
12 A
-
TO-252-3, DPak (2 Leads + Tab), SC-63
Schottky - Single
-
-
-
MPS™
TO-252-2
650V
GE10MPS06Q
650V 10A PQFN 8X8 SIC SCHOTTKY M
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
10 A
-
4-PowerVSFN
Schottky - Single
-
-
-
MPS™
QFN8x8
650V
GE12MPS06A
650V 12A TO-220-2 SIC SCHOTTKY M
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
12 A
-
TO-220-2
Schottky - Single
-
-
-
MPS™
TO-220-2
650V
GE12MPS06Q
650V 12A PQFN 8X8 SIC SCHOTTKY M
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
12 A
-
4-PowerVSFN
Schottky - Single
-
-
-
MPS™
QFN8x8
650V
GE2X12MPS06D
650V 20A TO-247-3 SIC SCHOTTKY M
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Quantity
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PCB Symbol, Footprint & 3D Model
-
-
24 A
-
TO-247-3
Schottky - 1 Pair Common Cathode
-
-
-
MPS™
TO-247-3
650V

About  RF Diodes

RF diodes are semiconductor components featuring two terminals that facilitate the passage of electric current in one direction while impeding it in the opposite direction. These devices are commonly employed in radio frequency (RF) matching circuits for electronic tuning applications, playing a crucial role in optimizing the performance of RF systems. Within the RF diode family, different types are available to suit specific application requirements. These types include pin diodes, Schottky diodes, and standard diodes. Each type offers distinct electrical characteristics and is chosen based on the unique demands of the circuit or system. When selecting RF diodes, engineers consider various specifications to ensure compatibility with the intended application. These specifications include the reverse voltage rating, which ranges from 1 to 15,000 volts, indicating the maximum voltage that can be applied across the diode in the reverse direction without causing breakdown. Additionally, the current values of RF diodes typically range from 10 mA to 20 A, reflecting the range of current-carrying capabilities of these devices. By understanding and carefully evaluating these specifications, engineers can choose the most suitable RF diodes for their RF matching circuits, enabling effective electronic tuning and optimal performance in RF systems. In summary, RF diodes are essential semiconductor devices used in RF matching circuits for electronic tuning. With variations such as pin, Schottky, and standard diodes, and specifications encompassing reverse voltage ratings and current values, these components offer versatile solutions for meeting the specific requirements of RF applications.