MA4E2502 Surmount™ Series, RF Diodes

Results:
2
Manufacturer
Series
Voltage - Peak Reverse (Max)
Capacitance @ Vr, F
Diode Type
Current - Max
Resistance @ If, F
Supplier Device Package
Power Dissipation (Max)
Package / Case
Operating Temperature
Grade
Qualification
Results remaining2
Applied Filters:
MA4E2502 Surmount™
Select
ImageProduct DetailPriceAvailabilityECAD ModelSupplier Device PackagePackage / CaseOperating TemperatureGradeDiode TypeCurrent - MaxSeriesVoltage - Peak Reverse (Max)Capacitance @ Vr, FResistance @ If, FPower Dissipation (Max)Qualification
MADP-030015-13140P
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
0603 (1608 Metric)
175°C (TJ)
-
PIN - Single
500 mA
MA4E2502 Surmount™
115V
0.78pF @ 40V, 1GHz
380mOhm @ 70mA, 1GHz
-
-
MADS-002502-1246LP
LOW BAR POCKET TAPE SURMOUNT CHI
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Die
Die
175°C (TJ)
-
Schottky - Single
20 mA
MA4E2502 Surmount™
5V
0.12pF @ 0V, 18GHz
-
50 mW
-

About  RF Diodes

RF diodes are semiconductor components featuring two terminals that facilitate the passage of electric current in one direction while impeding it in the opposite direction. These devices are commonly employed in radio frequency (RF) matching circuits for electronic tuning applications, playing a crucial role in optimizing the performance of RF systems. Within the RF diode family, different types are available to suit specific application requirements. These types include pin diodes, Schottky diodes, and standard diodes. Each type offers distinct electrical characteristics and is chosen based on the unique demands of the circuit or system. When selecting RF diodes, engineers consider various specifications to ensure compatibility with the intended application. These specifications include the reverse voltage rating, which ranges from 1 to 15,000 volts, indicating the maximum voltage that can be applied across the diode in the reverse direction without causing breakdown. Additionally, the current values of RF diodes typically range from 10 mA to 20 A, reflecting the range of current-carrying capabilities of these devices. By understanding and carefully evaluating these specifications, engineers can choose the most suitable RF diodes for their RF matching circuits, enabling effective electronic tuning and optimal performance in RF systems. In summary, RF diodes are essential semiconductor devices used in RF matching circuits for electronic tuning. With variations such as pin, Schottky, and standard diodes, and specifications encompassing reverse voltage ratings and current values, these components offer versatile solutions for meeting the specific requirements of RF applications.