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Manufacturer:
Toshiba Semiconductor and StorageDescription:
TRANS NPN/PNP PREBIAS 0.1W ES6
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Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Frequency - Transition | 250MHz, 200MHz |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| Supplier Device Package | ES6 |
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RN4986FE,LF(CT - From Manufacturer: Toshiba Electronic Devices and Storage Corporation, it is an TRANS NPN/PNP PREBIAS 0.1W ES6, part of Discrete Semiconductor Products, Transistors, Bipolar (BJT), Bipolar Transistor Arrays, Pre-Biased. RN4986FE,LF(CT stock status: In stock; order now! Ships immediately.
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