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Manufacturer:
Toshiba Semiconductor and StorageDescription:
TRANS PREBIAS NPN 50V 0.1A VESM
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Supplier Device Package | VESM |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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RN1105MFV,L3F(CT - From Manufacturer: Toshiba Electronic Devices and Storage Corporation, it is an TRANS PREBIAS NPN 50V 0.1A VESM, part of Discrete Semiconductor Products, Transistors, Bipolar (BJT), Single, Pre-Biased Bipolar Transistors. RN1105MFV,L3F(CT stock status: In stock; order now! Ships immediately.
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