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Manufacturer:
ROHM SemiconductorDescription:
NPN, SOT-416, R1=R2 POTENTIAL DI
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Rohm Semiconductor |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | EMT3 |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
| Qualification | AEC-Q101 |
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DTC114EE3HZGTL - From Manufacturer: ROHM Semiconductor, it is an NPN, SOT-416, R1=R2 POTENTIAL DI, part of Discrete Semiconductor Products, Transistors, Bipolar (BJT), Single, Pre-Biased Bipolar Transistors. DTC114EE3HZGTL stock status: need to confirm with us, contact us! Quick Reply.
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