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Manufacturer:
Diodes IncorporatedDescription:
TRANS PREBIAS NPN 200MW SOT23-3
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Attributes
Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 50mA, 5V |
| Supplier Device Package | SOT-23-3 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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DDTD113ZC-7-F - From Manufacturer: Diodes Incorporated, it is an TRANS PREBIAS NPN 200MW SOT23-3, part of Discrete Semiconductor Products, Transistors, Bipolar (BJT), Single, Pre-Biased Bipolar Transistors. DDTD113ZC-7-F stock status: In stock; order now! Ships immediately.
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