UnitedSiC has introduced the UJ4C/SC Generation 4 SiC FET series, which stands out in the industry due to its exceptional performance figures of merit. These FETs are specifically designed for power applications that require high efficiency and improved cost-effectiveness.
The UJ4C/SC series features a unique cascode configuration and is rated at 750 V. Customers have the flexibility to choose from a range of options, including devices with a resistance ranging from 6 mΩ to 60 mΩ. This allows users to select the most suitable device based on their specific requirements.
One of the key advantages of the UJ4C/SC Generation 4 SiC FETs is their ability to deliver lower conduction losses, resulting in increased efficiency. The devices exhibit excellent switching performance and improved Qrr (reverse recovery charge), ensuring efficient operation even at higher speeds. The reduction in Eon (turn-on energy) and Eoff (turn-off energy) losses at every given RDS(on) further contributes to enhanced performance.
Moreover, the UJ4C/SC series demonstrates reduced levels of Eoss (output capacitance) and Coss (output capacitance), which leads to lower total losses. This feature significantly improves the overall efficiency of power applications.
The UJ4C/SC Generation 4 SiC FETs can be safely driven with standard gate drive voltages ranging from 0 V to 12 V or 15 V. They maintain a good threshold noise margin with a true 5 V threshold voltage, ensuring reliable operation. Additionally, these SiC FETs are compatible with various drive voltages commonly used for Si IGBTs, Si MOSFETs, and SiC MOSFETs. This compatibility facilitates easy integration into existing power systems.
Furthermore, the UJ4C/SC series includes a built-in ESD (electrostatic discharge) gate protection clamp, providing additional safety features. This ensures that the devices are protected against potential ESD events during operation, increasing their reliability and lifespan.
It is worth noting that many devices within the UJ4C/SC Generation 4 SiC FET series are AEC-Q101 qualified. This qualification makes the devices suitable for automotive applications, where high reliability and performance are crucial.
In conclusion, UnitedSiC's UJ4C/SC Generation 4 SiC FETs offer industry-leading performance figures of merit for power applications. With their unique cascode configuration, lower conduction losses, improved efficiency, and enhanced cost-effectiveness, these devices provide an excellent solution for high-speed and high-efficiency power systems.
Low RDS(on) from 6 mΩ to 60 mΩ
5 µs short-circuit withstand time at 6 mΩ
5 V VTH, ±20 V VGS(max), ESD protected
Standard (0 V to 12 V) or SiC FET gate drives (bipolar)
Excellent reverse recovery
Low body diode
Low gate charge
TO247-3L, TO247-4L, and D2PAK-7L industry-standard packages
Many devices are AEC-Q101 qualified
Key figures of merit enable next-gen, high-performance power designs
Excellent RDS(on) x area
Improve the Qrr and Eon/Eoff losses at a given RDS(on)
Reduce both Coss(er)/Eoss and Coss(tr)
Automotive: traction inverters; on-board chargers; DC/DC converters
IT infrastructure: PFC; DC/DC converters
Renewables: solar inverters; energy storage
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