Transphorm unveils its latest innovation in power semiconductor technology with the introduction of the TP65H035G4WS, part of the SuperGaN product portfolio. This device, built on Transphorm’s JEDEC-qualified Gen IV GaN platform, signifies a significant advancement in high-voltage GaN devices.
The TP65H035G4WS offers a remarkable 35 mΩ on-resistance, a key parameter contributing to its superior performance. Encased in a standard TO-247 package, this device ensures easy drivability and compatibility with existing systems, reducing design complexity and time to market.
One of the standout features of the TP65H035G4WS is its optimal performance in bridgeless totem pole power factor correction (PFC) topology. This topology, increasingly favored in high-power applications for its efficiency and compactness, leverages the strengths of Transphorm's Gen IV GaN platform to deliver exceptional results.
Moreover, the TP65H035G4WS boasts a 4 V threshold and ±20 V gate robustness, enhancing its reliability and resilience in demanding operating conditions. These specifications make it an ideal choice for applications requiring high-quality and high-reliability GaN power semiconductors.
In summary, Transphorm's TP65H035G4WS represents a significant advancement in power semiconductor technology, offering engineers and designers a versatile and reliable solution for high-voltage applications. With its impressive performance metrics and robust design, it is poised to drive innovation across various industries, from automotive to industrial and beyond.
AC/DC converters
DC/DC converters
DC/AC inverter systems
Tell us what you're after