Tagore has introduced a groundbreaking solution with their TA9x10x series GaN transistors, pushing the boundaries of power and efficiency in high-frequency applications. These transistors are designed to deliver impressive performance, boasting a power saturation (PSAT) of up to 25 W while functioning seamlessly at frequencies of up to 4 GHz.
One of the key advantages of Tagore's GaN transistors lies in their adaptability. By employing a straightforward input/output match, these transistors can be tailored to suit a wide spectrum of applications, from broadband usage to specific frequency bands of interest. This flexibility enhances their utility across diverse scenarios, making them a versatile choice for engineers and designers alike.
Moreover, the compact form factor of these transistors further enhances their appeal. Available in small package sizes ranging from 3 mm x 3 mm to 5 mm x 6 mm QFN, they offer a space-efficient solution without compromising on performance. This feature is particularly valuable in applications where size constraints are a critical consideration.
In practical terms, Tagore's GaN transistors can serve as either a final stage power amplifier (PA) or a driver, demonstrating their versatility and reliability in various circuit configurations. Whether amplifying signals or driving other components, these transistors deliver consistent and robust performance, making them an asset in demanding high-frequency environments.
Overall, Tagore's TA9x10x series GaN transistors represent a significant advancement in the realm of high-frequency electronics. Their combination of power, efficiency, adaptability, and compact design positions them as a compelling choice for engineers seeking top-tier performance in their applications.
Small signal gain: >15 dB
High PAE
High linearity
Broadband covering using a single match
Military communication radios
Public safety radios
EW radios
Infrastructure
Tell us what you're after