Toshiba's has developed the DF2B6M4BSL, an ultra-low capacitance TVS diode tailored for high-frequency antennas. This specific TVS diode is engineered to shield semiconductors and other electronic components from static electricity and noise, all the while mitigating signal degradation.
Within the realm of radio communications, high-frequency antennas, including those utilized in Wi-Fi® systems, necessitate protection against high harmonic distortion. The DF2B6M4BSL, with a total capacitance of 0.15 pF (maximum), effectively fulfills this need. By leveraging ultra-low capacitance, the TVS diode effectively suppresses high harmonic distortion and diminishes the impact of static electricity and noise on antenna reception performance.
Notably, the DF2B6M4BSL can serve as a superior alternative to ESD suppressors typically employed in high-frequency antennas, offering heightened protection performance and lower static electricity voltage.
Beyond enhancing the reliability of high-frequency antennas, the DF2B6M4BSL finds application in ESD protection for signal lines, thereby expanding its utility in safeguarding electronic systems.
Low total capacitance: Ct=0.12 pF (typ.) / 0.15 pF (max) at VR=0 V, f=1 MHz
Low VPEAK voltage: VCL-max-peak=215 V (Reference) at IEC61000-4-2 (Contact), +8 kV input
Low harmonic distortion characteristics:
f=2.4 GHz, 20 dBm input conditions
2nd harmonics: -65.5 dBm (Reference)
3rd harmonics: -54.4 dBm (Reference)
f=5.0 GHz, 20d Bm input conditions
2nd harmonics: -64.7 dBm (Reference)
3rd harmonics: -55.5 dBm (Reference)
ESD protection in high-frequency antennas and high-speed signal lines in electronic equipment, such as IoT and mobile devices
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