STMicroelectronics has introduced the A2F12M12W2-F1 and A2U12M12W2-F2 ACEPACK 2 power modules, which showcase the integration of cutting-edge silicon carbide (SiC) power MOSFET technology in power electronics. The A2F12M12W2-F1 adopts a fourpack topology, while the A2U12M12W2-F2 is a component of a T-type 3-level inverter topology.
These modules stand out due to their utilization of the wide-bandgap SiC material and a high-thermal-performance substrate, enabling them to deliver exceptional on-resistance per unit area and outstanding switching performance. Importantly, the performance remains stable and reliable across varying temperatures, offering consistent operation under different thermal conditions.
One key feature of these power modules is the incorporation of an NTC sensor, which further enhances their efficiency and reliability by providing real-time temperature monitoring and control. This ensures that the modules operate within safe temperature limits, contributing to system longevity and performance optimization.
Overall, STMicroelectronics' innovative approach to power module design with the integration of advanced SiC technology not only improves efficiency but also enhances overall system performance, making them ideal for a wide range of applications where high performance and reliability are paramount.
Fourpack topology (A2F12M12W2-F1) / 3-level topology (A2U12M12W2-F2)
ACEPACK 2 power module
13 mΩ of typical RDS(ON) each switch
Insulation voltage UL certified of 2.5 kVRMS
Integrated NTC temperature sensor
DBC Cu-Al2O3-Cu based
Press-fit contact pin
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