PANJIT, a leading manufacturer, presents their first-generation silicon carbide (SiC) Schottky barrier diode (SBD) - SiC SBD Gen.1. This diode is specifically developed for electrical engineers seeking to design higher performance systems with reduced heat dissipation.
Unlike fast recovery diodes (FRDs) that generate additional switching losses during turn-off operation, the SiC SBD Gen.1 has no reverse recovery current. This feature enables it to operate at higher switching frequencies, enhancing overall system performance. However, it does have a drawback of lower breakdown voltage due to higher leakage.
The SiC SBD Gen.1 boasts several advantages over traditional silicon devices. Its higher bandgap energy results in very low leakage current, ensuring efficient power management. Additionally, the diode's higher electron velocity contributes to superior switching performance compared to silicon devices.
One notable feature of PANJIT's SiC SBD Gen.1 is its optimized low temperature dependency for forward voltage (VF). This characteristic allows for effective suppression of conduction losses during higher temperature operations, ensuring reliable and stable performance.
To enhance surge current capacity and system-level reliability, PANJIT employs a junction barrier Schottky (JBS) structure in the SiC SBD Gen.1. By adding a P+ layer to the metal contact area, the diode's surge current capabilities are significantly improved. This feature is particularly beneficial for cold-start system operation.
PANJIT offers a range of SiC SBD Gen.1 options to meet various application requirements. These include breakdown voltages of 650 V and 1,200 V, current ratings ranging from 4 A to 20 A, and discrete packages such as TO-220AC, TO-263, and TO-252AA.
In conclusion, PANJIT's SiC SBD Gen.1 delivers an optimal solution for higher performance power systems. With its exceptional features, including no reverse recovery current, low leakage current, superior switching performance, optimized low temperature dependency, and improved surge current capacity, this diode is a reliable choice for electrical engineers seeking enhanced power system performance.
Low conduction losses
Zero reverse recovery current
Temperature-independent switching
High surge current capability
High ruggedness
High junction temperature: +175°C
Server power
Telecom power
TV power
PC power
PV inverters
ESS
BMS
Home appliances
EV charging systems
UPS
Industrial motors
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