In the world of power electronics, MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) play a vital role in various applications ranging from motor drives to power supplies. IXYS has developed a line of MOSFETs that offer enhanced performance and efficiency through innovative design and manufacturing techniques.
One key feature of IXYS MOSFETs is their reduced ON-state resistance (RDS(ON)) and gate charge (Qg). This is achieved through a charge compensation principle and proprietary process technology. By minimizing these parameters, conduction losses during operation are significantly reduced. Lower resistance means less power dissipation, leading to higher overall system efficiency. Additionally, less energy is stored in the output capacitance, resulting in minimized switching losses.
Another advantage of IXYS MOSFETs is their low gate charge. Gate charge refers to the amount of charge required to turn the MOSFET on or off. By reducing this parameter, the MOSFET can respond more quickly to changes in the input signal, improving overall system performance. Moreover, a low gate charge allows for higher efficiency at light loads, ensuring optimal operation even under varying load conditions. Furthermore, it helps to lower the gate drive requirements, simplifying the design of the driving circuitry.
Furthermore, IXYS MOSFETs are avalanche rated, meaning they can withstand high-energy transients without failure. This makes them suitable for applications where voltage spikes may occur, such as inductive loads or motor drives. Additionally, these MOSFETs exhibit superior dV/dt performance, which refers to their ability to withstand rapid changes in voltage over time. This characteristic is crucial in high-frequency switching applications, where voltage spikes and transients can be common.
One unique advantage of IXYS MOSFETs is their positive temperature coefficient of ON-state resistance. This means that as the temperature increases, the ON-state resistance increases as well. While this may seem counterintuitive, it allows for MOSFETs to be operated in parallel to meet higher current requirements. As the temperature rises during operation, the resistance of each MOSFET also increases, ensuring a more balanced current sharing among the devices.
In conclusion, IXYS MOSFETs offer enhanced performance and efficiency through reduced ON-state resistance and gate charge. Their avalanche rating and superior dV/dt performance make them suitable for demanding applications. Furthermore, their positive temperature coefficient of ON-state resistance enables parallel operation for higher current requirements. With these innovative features, IXYS MOSFETs provide a reliable and efficient solution for various power electronics applications.
Synchronous rectification in switching power supplies
Motor control (48 V to 80 V systems)
DC/DC converters
Uninterruptible power supplies
Electric forklifts
Class-D audio amplifiers
Telecom systems
Low ON-resistance (RDS(ON)) and gate charge (Qg)
dV/dt ruggedness
Avalanche capability
International standard packages
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