The Bourns® BID series of insulated gate bipolar transistors (IGBTs) represents a significant advancement in power semiconductor technology. By merging features of MOSFET gates and bipolar transistors, these devices offer a unique blend of performance characteristics tailored for high voltage and high current applications.
One key technology employed in the BID series is the advanced trench-gate field-stop design. This innovative approach provides precise control over the device's dynamic characteristics, leading to a notable reduction in collector-emitter saturation voltage (VCE(sat)) and minimizing switching losses during operation. As a result, the BID series delivers enhanced efficiency and reliability in various power management applications.
Moreover, the incorporation of thermally efficient packaging options such as TO-252, TO-247, and TO-247N further enhances the overall performance of these IGBT solutions. The lower thermal resistance (Rth(j-c)) offered by these packages ensures effective heat dissipation, contributing to improved device longevity and sustained operational efficiency.
For designers and engineers working on switch-mode power supplies (SMPS), uninterruptible power sources (UPS), or power factor correction (PFC) systems, the Bourns® BID series provides a comprehensive solution that addresses the critical demands of modern power electronics applications. With its focus on technological innovation and performance optimization, Bourns® continues to set new standards in the field of power semiconductor devices.
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Voltage rating: 600 V and 650 V
Amperage range: 5 A up to 50 A
Low VCE(sat)
Trench-gate field-stop technology
Co-packaged with fast recovery diodes (FRD)
SMPS
UPS
PFC
Induction heating
Stepper motors
Inverters
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