The SSM6N7002KFU,LF is a power MOSFET manufactured by Toshiba Electronic Devices and Storage Corporation. It is designed for use in various applications that require high-speed switching and low on-resistance.
The SSM6N7002KFU,LF features a drain-source voltage (VDS) of 60V, a continuous drain current (ID) of 3A, and a low on-resistance (RDS(ON)) of 60mΩ. It also has a gate threshold voltage (VGS(th)) of 2-4V and a total gate charge (Qg) of 6nC.
High-speed switching capability
Low on-resistance
Low gate charge
Enhanced thermal performance
RoHS compliant
The SSM6N7002KFU,LF is specifically designed to offer high-speed switching performance, allowing for efficient power management in various electronic devices. Its low on-resistance minimizes power dissipation, resulting in improved overall system efficiency. The MOSFET's low gate charge enables fast switching, reducing the risk of thermal stress. Additionally, its enhanced thermal performance ensures reliable operation even in demanding environments.
DC-DC converters
Power supplies
Motor control systems
Inverters
Battery management systems
When using the SSM6N7002KFU,LF, it is important to follow the recommended operating conditions provided by Toshiba Electronic Devices and Storage Corporation. Proper heat sinking and thermal management techniques should be implemented to ensure optimal performance and reliability. The datasheet and application notes provided by the manufacturer should be consulted for detailed information on circuit design and layout considerations.
The SSM6N7002KFU,LF power MOSFET from Toshiba Electronic Devices and Storage Corporation offers high-speed switching, low on-resistance, and enhanced thermal performance. It is an ideal choice for applications requiring efficient power management and reliable operation. With its advanced features and advantages, this MOSFET contributes to the development of innovative electronic devices across various industries.
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