Gate Drivers

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ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeOperating TemperatureInput TypeVoltage - SupplyDriven ConfigurationChannel TypeNumber of DriversGate TypeLogic Voltage - VIL, VIHCurrent - Peak Output (Source, Sink)High Side Voltage - Max (Bootstrap)Rise / Fall Time (Typ)Package / CaseSupplier Device Package
IRS2336DJPBF
IC GATE DRVR HALF-BRIDGE 44PLCC
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 150°C (TJ)
Inverting
10V ~ 20V
Half-Bridge
3-Phase
6
IGBT, N-Channel MOSFET
0.8V, 2.5V
200mA, 350mA
600 V
125ns, 50ns
44-LCC (J-Lead), 32 Leads
44-PLCC, 32 Leads (16.58x16.58)
IR2133PBF
IC GATE DRVR HALF-BRIDGE 28DIP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
125°C (TJ)
Inverting
10V ~ 20V
Half-Bridge
3-Phase
6
IGBT, N-Channel MOSFET
0.8V, 2.2V
250mA, 500mA
600 V
90ns, 40ns
28-DIP (0.600", 15.24mm)
28-PDIP
IR2135PBF
IC GATE DRVR HALF-BRIDGE 28DIP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
125°C (TJ)
Inverting
10V ~ 20V
Half-Bridge
3-Phase
6
IGBT, N-Channel MOSFET
0.8V, 2.2V
250mA, 500mA
600 V
90ns, 40ns
28-DIP (0.600", 15.24mm)
28-PDIP
IRS21814PBF
IC GATE DRVR HALF-BRIDGE 14DIP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 150°C (TJ)
Non-Inverting
10V ~ 20V
Half-Bridge
Independent
2
IGBT, N-Channel MOSFET
0.8V, 2.5V
1.9A, 2.3A
600 V
40ns, 20ns
14-DIP (0.300", 7.62mm)
14-DIP
IR21366SPBF
IC GATE DRVR HALF-BRIDGE 28SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 150°C (TJ)
Inverting
12V ~ 20V
Half-Bridge
3-Phase
6
IGBT, N-Channel MOSFET
0.8V, 2.5V
200mA, 350mA
600 V
125ns, 50ns
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IR21364SPBF
IC GATE DRVR HALF-BRIDGE 28SOIC
5+
$10.5634
10+
$9.8592
15+
$9.5070
Quantity
70 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 150°C (TJ)
Non-Inverting
11.5V ~ 20V
Half-Bridge
3-Phase
6
IGBT, N-Channel MOSFET
0.8V, 2.5V
200mA, 350mA
600 V
125ns, 50ns
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IR21091PBF
IC GATE DRVR HALF-BRIDGE 8DIP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 150°C (TJ)
Non-Inverting
10V ~ 20V
Half-Bridge
Synchronous
2
IGBT, N-Channel MOSFET
0.8V, 2.9V
200mA, 350mA
600 V
150ns, 50ns
8-DIP (0.300", 7.62mm)
8-PDIP
IRS21271PBF
IC GATE DRVR HIGH-SIDE 8DIP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 150°C (TJ)
Non-Inverting
9V ~ 20V
High-Side
Single
1
IGBT, N-Channel MOSFET
0.8V, 2.5V
290mA, 600mA
600 V
80ns, 40ns
8-DIP (0.300", 7.62mm)
8-PDIP
IR21362PBF
IC GATE DRVR HALF-BRIDGE 28DIP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 150°C (TJ)
Inverting, Non-Inverting
11.5V ~ 20V
Half-Bridge
3-Phase
6
IGBT, N-Channel MOSFET
0.8V, 3V
200mA, 350mA
600 V
125ns, 50ns
28-DIP (0.600", 15.24mm)
28-PDIP
IRS21094PBF
IC GATE DRVR HALF-BRIDGE 14DIP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 150°C (TJ)
Non-Inverting
10V ~ 20V
Half-Bridge
Synchronous
2
IGBT, N-Channel MOSFET
0.8V, 2.5V
290mA, 600mA
600 V
100ns, 35ns
14-DIP (0.300", 7.62mm)
14-DIP
IRS21091PBF
IC GATE DRVR HALF-BRIDGE 8DIP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 150°C (TJ)
Non-Inverting
10V ~ 20V
Half-Bridge
Synchronous
2
IGBT, N-Channel MOSFET
0.8V, 2.5V
290mA, 600mA
600 V
100ns, 35ns
8-DIP (0.300", 7.62mm)
8-PDIP
IRS26310DJPBF
IC GATE DRVR HALF-BRIDGE 44PLCC
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 150°C (TJ)
Non-Inverting
12V ~ 20V
Half-Bridge
3-Phase
6
IGBT, N-Channel MOSFET
0.8V, 2.5V
200mA, 350mA
600 V
125ns, 50ns
44-LCC (J-Lead), 32 Leads
44-PLCC, 32 Leads (16.58x16.58)
IR2131PBF
IC GATE DRVR HALF-BRIDGE 28DIP
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
-40°C ~ 150°C (TJ)
Inverting
10V ~ 20V
Half-Bridge
Independent
6
IGBT, N-Channel MOSFET
0.8V, 2.2V
250mA, 500mA
600 V
80ns, 40ns
28-DIP (0.600", 15.24mm)
28-PDIP
IR21091SPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 150°C (TJ)
Non-Inverting
10V ~ 20V
Half-Bridge
Synchronous
2
IGBT, N-Channel MOSFET
0.8V, 2.9V
200mA, 350mA
600 V
150ns, 50ns
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IR2235SPBF
IC GATE DRVR HALF-BRIDGE 28SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
125°C (TJ)
Inverting
10V ~ 20V
Half-Bridge
3-Phase
6
IGBT, N-Channel MOSFET
0.8V, 2V
250mA, 500mA
1200 V
90ns, 40ns
28-SOIC (0.295", 7.50mm Width)
28-SOIC
IRS2608DSPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 150°C (TJ)
Inverting, Non-Inverting
10V ~ 20V
Half-Bridge
Independent
2
IGBT, N-Channel MOSFET
0.8V, 2.2V
200mA, 350mA
600 V
150ns, 50ns
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRS21281SPBF
IC GATE DRVR HIGH-SIDE 8SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-40°C ~ 150°C (TJ)
Inverting
9V ~ 20V
High-Side
Single
1
IGBT, N-Channel MOSFET
0.8V, 2.5V
290mA, 600mA
600 V
80ns, 40ns
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IRS21853SPBF
IC GATE DRVR HIGH-SIDE 16SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
Non-Inverting
10V ~ 20V
High-Side
Independent
2
IGBT, N-Channel MOSFET
0.6V, 3.5V
2A, 2A
600 V
15ns, 15ns
16-SOIC (0.154", 3.90mm Width)
16-SOIC
IRS21953SPBF
IC GATE DRVR HALF BRD/LOW 16SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
Non-Inverting
10V ~ 20V
Half-Bridge, Low-Side
Independent
3
N-Channel MOSFET
0.6V, 3.5V
500mA, 500mA
600 V
25ns, 25ns
16-SOIC (0.154", 3.90mm Width)
16-SOIC
IRS21952SPBF
IC GATE DRVR HALF BRD/LOW 16SOIC
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
Non-Inverting
10V ~ 20V
Half-Bridge, Low-Side
Independent
3
N-Channel MOSFET
0.6V, 3.5V
500mA, 500mA
600 V
25ns, 25ns
16-SOIC (0.154", 3.90mm Width)
16-SOIC

Gate Drivers

Gate Drivers are a combination of electronic components that work together to facilitate power management and control in various applications. Specifically, gate drivers are a type of IC that provide the necessary functions to interface control signals from a control device to semiconductor devices like FETs (Field-Effect Transistors) or IGBTs (Insulated Gate Bipolar Transistors) in power conversion applications.

The primary purpose of gate drivers is to enable the control and switching of power flow through these semiconductor devices. They achieve this by providing functions such as isolation, amplification, reference shifting, bootstrapping, and other essential operations that ensure seamless signal transmission between the control device and the semiconductor devices.

Isolation is crucial to prevent any interference or feedback between the control circuitry and the power circuitry, ensuring safety and stability in the system. Amplification allows the control signals to reach the necessary voltage or current levels required to drive the semiconductor devices effectively. Reference shifting ensures that the control signals align with the specific voltage levels of the semiconductor devices. Bootstrapping helps to enhance the efficiency of the gate drivers by utilizing energy from the power supply to boost the gate drive voltage.

By providing these functionalities, gate driver PMICs enable precise control over power flow and efficient switching of semiconductor devices, resulting in optimized performance and reliability of power conversion systems. They are commonly used in motor control applications, renewable energy systems, power supplies, and other power electronics applications where efficient power management is essential.

Overall, Integrated Circuits - Power Management - Gate Drivers form a critical part of power conversion systems, enabling effective communication and control between the control device and the semiconductor devices. They contribute to enhanced efficiency, reliability, and performance in various power management applications.