Transistors - FETs, MOSFETs - Single

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ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)TechnologyFET FeatureVgs(th) (Max) @ IdCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackagePackage / Case
NTMFS4985NFT3G
MOSFET N-CH 30V 17.5A/65A 5DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
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Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
MOSFET (Metal Oxide)
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2.3V @ 1mA
17.5A (Ta), 65A (Tc)
4.5V, 10V
3.4mOhm @ 30A, 10V
30.5 nC @ 10 V
±20V
2100 pF @ 15 V
1.63W (Ta), 22.73W (Tc)
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4C06NT3G
MOSFET N-CH 30V 11A/69A 5DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
MOSFET (Metal Oxide)
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2.1V @ 250µA
11A (Ta), 69A (Tc)
4.5V, 10V
4mOhm @ 30A, 10V
26 nC @ 10 V
±20V
1683 pF @ 15 V
770mW (Ta), 30.5W (Tc)
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4C50NT3G
MOSFET N-CH 30V 46A 5DFN
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PCB Symbol, Footprint & 3D Model
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Surface Mount
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21.7A (Ta)
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5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4C53NT1G
MOSFET N-CH 30V 38A 5DFN
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PCB Symbol, Footprint & 3D Model
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Surface Mount
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5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4C53NT3G
MOSFET N-CH 30V 38A 5DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
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Surface Mount
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5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4C55NT3G
MOSFET N-CH 30V 11.9A/78A 5DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Surface Mount
-
N-Channel
30 V
MOSFET (Metal Oxide)
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2.2V @ 250µA
11.9A (Ta), 78A (Tc)
4.5V, 10V
3.4mOhm @ 30A, 10V
30 nC @ 10 V
±20V
1972 pF @ 15 V
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5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4C56NT1G
MOSFET N-CH 30V 69A 5DFN
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PCB Symbol, Footprint & 3D Model
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Surface Mount
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5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4C56NT3G
MOSFET N-CH 30V 69A 5DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
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Surface Mount
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5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4C58NT1G
MOSFET N-CH 30V 52A 5DFN
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PCB Symbol, Footprint & 3D Model
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Surface Mount
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5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4C58NT3G
MOSFET N-CH 30V 52A 5DFN
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PCB Symbol, Footprint & 3D Model
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Surface Mount
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5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMFS4C59NT3G
MOSFET N-CH 30V 9A/52A 5DFN
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Quantity
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PCB Symbol, Footprint & 3D Model
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Surface Mount
-
N-Channel
30 V
MOSFET (Metal Oxide)
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2.1V @ 250µA
9A (Ta), 52A (Tc)
4.5V, 10V
5.8mOhm @ 30A, 10V
22.2 nC @ 10 V
±20V
1252 pF @ 15 V
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5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NTMS4503NSR2G
MOSFET N-CH 28V 14A 8SO
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PCB Symbol, Footprint & 3D Model
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Surface Mount
-55°C ~ 150°C (TJ)
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8-SOIC
8-SOIC (0.154", 3.90mm Width)
NTP4813NLG
MOSFET N-CH 30V 10.2A TO220AB
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PCB Symbol, Footprint & 3D Model
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Through Hole
-55°C ~ 175°C (TJ)
N-Channel
30 V
MOSFET (Metal Oxide)
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2.5V @ 250µA
10.2A (Ta)
4.5V, 10V
13.1mOhm @ 20A, 10V
17 nC @ 11.5 V
±20V
895 pF @ 12 V
2.4W (Ta), 60W (Tc)
TO-220-3
TO-220-3
NTR4503NST1G
MOSFET N-CH 30V 2.5A SOT23
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SOT-23-3 (TO-236)
TO-236-3, SC-59, SOT-23-3
NTTFS4965NFTAG
MOSFET N-CH 30V 16.3A/64A 8WDFN
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PCB Symbol, Footprint & 3D Model
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Surface Mount
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N-Channel
30 V
MOSFET (Metal Oxide)
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2.3V @ 250µA
16.3A (Ta), 64A (Tc)
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3.5mOhm @ 20A, 10V
29.4 nC @ 10 V
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2075 pF @ 15 V
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8-WDFN (3.3x3.3)
8-PowerWDFN
NTTFS4965NFTWG
MOSFET N-CH 30V 16.3A/64A 8WDFN
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PCB Symbol, Footprint & 3D Model
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Surface Mount
-
N-Channel
30 V
MOSFET (Metal Oxide)
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2.3V @ 250µA
16.3A (Ta), 64A (Tc)
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3.5mOhm @ 20A, 10V
29.4 nC @ 10 V
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2075 pF @ 15 V
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8-WDFN (3.3x3.3)
8-PowerWDFN
NTTFS4C08NTWG
MOSFET N-CH 30V 9.3A 8WDFN
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Quantity
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PCB Symbol, Footprint & 3D Model
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Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
MOSFET (Metal Oxide)
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2.2V @ 250µA
9.3A (Ta)
4.5V, 10V
5.9mOhm @ 30A, 10V
18.2 nC @ 10 V
±20V
1113 pF @ 15 V
820mW (Ta), 25.5W (Tc)
8-WDFN (3.3x3.3)
8-PowerWDFN
NTTFS4C50NTWG
MOSFET N-CH 30V 75A 8WDFN
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PCB Symbol, Footprint & 3D Model
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Surface Mount
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19.4A (Ta)
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8-WDFN (3.3x3.3)
8-PowerWDFN
NTTFS4C53NTAG
MOSFET N-CH 30V 35A 8WDFN
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PCB Symbol, Footprint & 3D Model
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Surface Mount
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8-WDFN (3.3x3.3)
8-PowerWDFN
NTTFS4C53NTWG
MOSFET N-CH 30V 35A 8WDFN
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PCB Symbol, Footprint & 3D Model
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Surface Mount
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8-WDFN (3.3x3.3)
8-PowerWDFN

Transistors - FETs, MOSFETs - Single

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals.

FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits.

One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits.

In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments.

In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.